| 摘要 |
PURPOSE: A bipolar transistor and a manufacturing method thereof are provided to reduce ion implantation processes by using a high density silicon epitaxial layer and a spacer. CONSTITUTION: A trench is formed by etching a part of a substrate. A first collector(106) is formed in the inner wall of the trench. A second collector is formed on the semiconductor substrate in the inner wall of the trench. A first spacer(110) is formed in the sidewall of the first collector. An intrinsic base(119) is connected to the third collector. |
