| 摘要 |
An integrated circuit ESD protection circuit (270) is formed with a combination device consisting of a gated diode (271) and an output buffer MOSFET (272) where the body tie fingers of a first conductivity type (307) are formed in the substrate (301, 302) and isolated from the drain regions of a second conductivity type (310) using a plurality of diode poly fingers (231, 232) which are interleaved with a plurality of poly gate fingers (204, 205) forming the output buffer MOSFET (272).
|
