发明名称 |
Methods of Fabricating Semiconductor Devices |
摘要 |
A method of fabricating a semiconductor device using a recess channel array is disclosed. A substrate is provided having a first region and a second region, including a first transistor in the first region including a first gate electrode partially filling a trench, and source and drain regions that are formed at both sides of the trench, and covered by a first insulating layer. A first conductive layer is formed on the substrate. A contact hole through which the drain region is exposed is formed by patterning the first conductive layer and the first insulating layer. A contact plug is formed that fills the contact hole. A bit line is formed that is electrically connected to the drain region through the contact plug, and simultaneously a second gate electrode is formed in the second region by patterning the first conductive layer.
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申请公布号 |
US2013026564(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201213644166 |
申请日期 |
2012.10.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO KWAN-SIK;CHUN KWANG-YOUL;YOON JAE-MAN;KIM BONG-SOO |
分类号 |
H01L27/088;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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