| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image sensor in which the signal charges of a photoelectric conversion region can be read entirely regardless of the depth position of a semiconductor substrate, and thereby the imaging characteristics are enhanced while eliminating the afterimage. <P>SOLUTION: The solid-state image sensor includes a read gate 21r buried in a trench 17R formed in a semiconductor substrate 13 via a gate insulator 19, and a photoelectric conversion region 15r provided in the semiconductor substrate 13. Furthermore, a floating diffusion 23 is provided in the surface layer of the semiconductor substrate 13 while keeping an interval between the photoelectric conversion region 15r. In particular, a potential adjustment region 25r is provided in contact with the photoelectric conversion region 15r and the gate insulator 19. The potential adjustment region 25r has the same conductivity type as that of the semiconductor substrate 13 and the photoelectric conversion region 15r, and is an impurity region having the concentration of conductivity type lower than that of the semiconductor substrate 13 and the photoelectric conversion region 15r. <P>COPYRIGHT: (C)2013,JPO&INPIT |
