发明名称 MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR ELEMENT AND ORGANIC SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor element including a plurality of organic transistors having excellent characteristics. <P>SOLUTION: An organic semiconductor element 10 comprises a substrate 11 and a plurality of organic transistors 20 which are provided on the substrate 11 and each of which has an organic semiconductor region 4 including an organic semiconductor material. The organic semiconductor region 4 is supported by a support member 17 including at least the substrate 11. A manufacturing method of the organic semiconductor element 10 comprises the steps of: preparing the support member 17; providing a continuous organic semiconductor layer 30 including the organic semiconductor material on the support member 17; and forming a plurality of organic semiconductor regions 4 by patterning the organic semiconductor layer 30 (patterning step). The patterning step further includes a step of preparing an uneven printing plate 40 having recesses 42 and salients 41 and a contacting step of patterning the organic semiconductor layer 30 by bringing the salients 41 of the uneven printing plate 40 into contact with the organic semiconductor layer 30 on the support member 17. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013021190(A) 申请公布日期 2013.01.31
申请号 JP20110154165 申请日期 2011.07.12
申请人 DAINIPPON PRINTING CO LTD 发明人 FUJIMOTO SHINYA;NAGAE MITSUTAKA;TOMINO KEN
分类号 H01L21/336;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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