发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
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申请公布号 |
US2013029440(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201213632856 |
申请日期 |
2012.10.01 |
申请人 |
EPISTAR CORPORATION;LEE YA-JU;HSU TA-CHENG;CHIN MING-TA;CHEN YEN-WEN;WU-TSUNG LO;LI CHUNG-YUAN;HSIEH MIN-HSUN |
发明人 |
LEE YA-JU;HSU TA-CHENG;CHIN MING-TA;CHEN YEN-WEN;WU-TSUNG LO;LI CHUNG-YUAN;HSIEH MIN-HSUN |
分类号 |
H01L33/22;H01L33/16 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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