TIN OXIDE DEPOSITED BY LINEAR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

摘要

A process for the deposition of a tin oxide film is provided that includes the decomposition of a tetravalent tin precursor under conditions of plasma enhanced chemical vapor deposition in a linear plasma source and onto a substrate moving through a plasma generated by the linear plasma source with a linear uniformity of thickness that varies by less than 5 thickness percent across the substrate. The substrate having a width of greater than 30 centimeters. The tin oxide film contains a dopant and a dopant concentration such that the film has a resistivity as a function of film deposition temperature of less than −4.6×10−5 Ohm-centimeter per degree Kelvin (T) plus 0.01 Ohm-centimeter where T is between 293 Kelvin and 673 Kelvin.