发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
申请公布号 US2013025790(A1) 申请公布日期 2013.01.31
申请号 US201213644999 申请日期 2012.10.04
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD.;MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 MATSUDA RYUICHI;INOUE MASAHIKO;YOSHIDA KAZUTO;SHIMAZU TADASHI
分类号 H01L21/3065;C23C16/50;C23C16/52;H05H1/24 主分类号 H01L21/3065
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