发明名称 |
Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same |
摘要 |
Cadmium Telluride Thin Film Photovoltaic Devices and Methods of Manufacturing the Same 5OF THE DISCLOSURE Methods for manufacturing a cadmium telluride based thin film photovoltaic device 10 are generally disclosed. The method can include sputtering a resistive transparent layer 16 on a transparent conductive oxide layer 14 from an alloy target 64 including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium 10 sulfide layer 18 on the resistive transparent layer 16, forming a cadmium telluride layer 20 on the cadmium sulfide layer 18, and forming a back contact layer 22 on the cadmium telluride layer 18. Cadmium telluride thin film photovoltaic devices 10 are also generally disclosed including a resistive transparent layer 16 having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction. C /word/SPEC-9t305 Id. Fig. 1 |
申请公布号 |
AU2010257207(B2) |
申请公布日期 |
2013.01.31 |
申请号 |
AU20100257207 |
申请日期 |
2010.12.15 |
申请人 |
PRIMESTAR SOLAR, INC. |
发明人 |
GOSSMAN, ROBERT DWAYNE;DRAYTON, JENNIFER A. |
分类号 |
C23C14/34;C23C14/18;C23C28/02;H01L31/0272;H01L31/04;H01L31/18 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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