发明名称 |
METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIPOLAR TRANSISTOR |
摘要 |
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.
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申请公布号 |
US2013029461(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113192385 |
申请日期 |
2011.07.27 |
申请人 |
BHALLA ANUP;BOBDE MADHUR;DING YONGPING;ZHANG XIAOTIAN;HO YUEH-SE |
发明人 |
BHALLA ANUP;BOBDE MADHUR;DING YONGPING;ZHANG XIAOTIAN;HO YUEH-SE |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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