发明名称 FULLY DEPLETED SILICON ON INSULATOR NEUTRON DETECTOR
摘要 A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3 (3He), and gadolinium-157 (157Gd).
申请公布号 US2013026544(A1) 申请公布日期 2013.01.31
申请号 US201113189848 申请日期 2011.07.25
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;GORDON MICHAEL S.;RODBELL KENNETH P.;YAU JENG-BANG 发明人 GORDON MICHAEL S.;RODBELL KENNETH P.;YAU JENG-BANG
分类号 H01L31/119;H01L31/18 主分类号 H01L31/119
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