MEMORY CELL FOR HIGH-DENSITY RRAM DEVICES

摘要

This disclosure provides embodiments for the formation of vertical memory cell structures (38) that may be implemented in RRAM devices. In one embodiment, memory cell area may be increased by varying word line (22) height (?WL) and/or word line (22) interface surface (50) characteristics to ensure the creation of a grain boundary that is suitable for formation of conductive pathways through an active layer (44) of an RRAM memory cell (20). This may maintain continuum behavior while reducing random cell-to-cell variability that is often encountered at nanoscopic scales. In another embodiment, such vertical memory cell structures (38) may be formed in multiple-tiers to define a three-dimensional RRAM memory array (110). Further embodiments also provide a spacer pitch-doubled RRAM memory array (120) that integrates vertical memory cell structures (38).