| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device. <P>SOLUTION: A semiconductor device 1 comprises: a metal foil 10b formed on a first principal surface of an insulating plate 10a; at least one of metal foils 10c, 10d formed on a second principal surface of the insulating plate 10a; at least one semiconductor element 20 bonded on the metal foils 10c, 10d; a printed board 30 arranged so as to face the principal surface of the insulating plate 10a on which the semiconductor element 20 is arranged; and a plurality of post electrodes 30e implanted in through holes 30d provided on the printed board 30 for electrically connecting a metal foil 30b formed on a first principal surface of the printed board 30, a meta foil 30c formed on a second principal surface of the printed board 30 so as to correspond to the metal foil 30b and a main electrode of the semiconductor element 20. Accordingly, the semiconductor device 1 having high reliability, high performance characteristics and high productivity can be achieved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
