| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor solar cell material which enables formation of an even thin film without compositional segregation of low-resistance group I metal selenides, even when group I metal (Cu or similar) selenides and group III metal (In or similar) selenides are used, and to provide a high efficiency solar cell using the material. <P>SOLUTION: A compound semiconductor solar cell material capable of attaining a chalcopyrite crystal structure upon heating comprises a group III metal selenide (core section 101) arranged in a central section and having a micro-particle shape, and a group I metal selenide (shell section 102) formed so as to cover the surface of the group III metal selenide. <P>COPYRIGHT: (C)2013,JPO&INPIT |
