| 摘要 |
A plurality of element isolation insulating films are formed in a semiconductor substrate in a memory cell array and have a first direction as a long direction. A plurality of element formation regions are formed isolated by the element isolation insulating films. A memory string is formed in each of the element formation regions. A plurality of element formation region groups are each configured by the element formation regions. In a memory cell array, in a second direction orthogonal to the first direction, a spacing between the element formation region groups is configured larger than a spacing between the element formation regions in each of the element formation region groups. A control circuit executes a write operation on the memory cell array on an element formation region group basis.
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