发明名称 METHOD FOR MANUFACTURING WAFER-BONDED SEMICONDUCTOR DEVICE
摘要 The invention provides a wafer-bonded semiconductor device wherein warpage generated when wafers are bonded is reduced at a low cost ad through a simple process. In a method for manufacturing a wafer-bonded semiconductor device by bonding a first wafer substrate and a second wafer substrate together, the method of the invention includes a first step of forming in advance bonding members having a bonding function when heated on the wafer-bonded surface sides of the first wafer substrate and the second wafer substrate, respectively; a second step of supplying flux paste containing two or more kinds of powdery materials having reactivity to the surfaces of the bonding members formed in the first step; and a third step of causing excitation to have the flux paste supplied in the second step start reacting.
申请公布号 US2013029438(A1) 申请公布日期 2013.01.31
申请号 US201013519590 申请日期 2010.10.27
申请人 TAKAI TOSHIAKI;SAKIGAWA YUKIO 发明人 TAKAI TOSHIAKI;SAKIGAWA YUKIO
分类号 H01L21/26;H01L31/18;H01L33/48 主分类号 H01L21/26
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