发明名称 |
METHOD FOR MANUFACTURING WAFER-BONDED SEMICONDUCTOR DEVICE |
摘要 |
The invention provides a wafer-bonded semiconductor device wherein warpage generated when wafers are bonded is reduced at a low cost ad through a simple process. In a method for manufacturing a wafer-bonded semiconductor device by bonding a first wafer substrate and a second wafer substrate together, the method of the invention includes a first step of forming in advance bonding members having a bonding function when heated on the wafer-bonded surface sides of the first wafer substrate and the second wafer substrate, respectively; a second step of supplying flux paste containing two or more kinds of powdery materials having reactivity to the surfaces of the bonding members formed in the first step; and a third step of causing excitation to have the flux paste supplied in the second step start reacting.
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申请公布号 |
US2013029438(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201013519590 |
申请日期 |
2010.10.27 |
申请人 |
TAKAI TOSHIAKI;SAKIGAWA YUKIO |
发明人 |
TAKAI TOSHIAKI;SAKIGAWA YUKIO |
分类号 |
H01L21/26;H01L31/18;H01L33/48 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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