发明名称 |
INTEGRATED CIRCUIT DEVICES HAVING FEATURES WITH REDUCED EDGE CURVATURE AND METHODS FOR MANUFACTURING THE SAME |
摘要 |
A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.
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申请公布号 |
US2013026607(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113190319 |
申请日期 |
2011.07.25 |
申请人 |
SYNOPSYS, INC.;MOROZ VICTOR;BOMHOLT LARS |
发明人 |
MOROZ VICTOR;BOMHOLT LARS |
分类号 |
H01L29/04;H01L21/425 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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