发明名称 INTEGRATED CIRCUIT DEVICES HAVING FEATURES WITH REDUCED EDGE CURVATURE AND METHODS FOR MANUFACTURING THE SAME
摘要 A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.
申请公布号 US2013026607(A1) 申请公布日期 2013.01.31
申请号 US201113190319 申请日期 2011.07.25
申请人 SYNOPSYS, INC.;MOROZ VICTOR;BOMHOLT LARS 发明人 MOROZ VICTOR;BOMHOLT LARS
分类号 H01L29/04;H01L21/425 主分类号 H01L29/04
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