DETERMINING THE DOPANT CONTENT OF A COMPENSATED SILICON SAMPLE

摘要

The method of determining concentrations of dopant impurities in a silicon sample involves the provision of a silicon ingot comprising donor-type dopant impurities and acceptor-type dopant impurities, a step (F1) for determining the position of a first zone of the ingot in which there takes place a transition between a first conductivity type and a second opposite conductivity type, a step (F2) for measuring the concentration of free charge carriers in a second zone of the ingot, separate from the first zone, using the Hall effect, Fourier transform infrared spectroscopy or a method using the lifetime of the charge carriers, and a step (F3) for determining the concentrations of dopant impurities in the sample based on the position of the first zone and the concentration of free charge carriers in the second zone of the ingot.