| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable protection of a low concentration impurity diffusion layer of a high breakdown voltage transistor from contamination to stabilize characteristics of a semiconductor device. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a gate insulation film 3a and a gate electrode 4a sequentially on a substrate 1; performing impurity injection on the substrate 1 using the gate electrode 4a as a mask to form a low concentration impurity diffusion layer 5a lateral to the gate electrode 4a above the substrate 1; subsequently, forming an impurity diffusion suppression film 7a so as to continuously cover from above the gate electrode 4a through lateral to the gate electrode 4a to a part of above the low concentration impurity diffusion layer 5a; subsequently, performing impurity injection on the substrate 1 using the gate electrode 4a and the impurity diffusion suppression film 7a as a mask to form a high concentration impurity diffusion layer 8a having an impurity concentration higher than that of the low concentration impurity diffusion layer 5a lateral to the gate electrode 4a above the substrate 1; and subsequently, performing a heat treatment on the substrate 1 in a state where the impurity diffusion suppression film 7a remains. <P>COPYRIGHT: (C)2013,JPO&INPIT |
