发明名称 Memory and Method for Programming Memory Cells
摘要 A memory includes a memory cell including a first terminal, a second terminal and a channel extending between the first terminal and the second terminal. The memory further includes an energy storage element configured to support a programming of the memory cell, the energy storage element being coupled to the first terminal, an energy supply coupled to the energy storage element, and a controller. The controller is configured to activate the energy supply and to bring the channel of the memory cell into a non-conductive state for energizing the energy storage element, and to subsequently bring the channel of the memory cell into a conductive state for programming the memory cell based on the energy stored in the energy storage element.
申请公布号 US2013028026(A1) 申请公布日期 2013.01.31
申请号 US201113192227 申请日期 2011.07.27
申请人 INFINEON TECHNOLOGIES AG;NIRSCHL THOMAS;OTTERSTEDT JAN;ALLERS WOLF;SAVIGNAC DOMINIQUE 发明人 NIRSCHL THOMAS;OTTERSTEDT JAN;ALLERS WOLF;SAVIGNAC DOMINIQUE
分类号 G11C16/10 主分类号 G11C16/10
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