发明名称 |
TSV PILLAR AS AN INTERCONNECTING STRUCTURE |
摘要 |
The present invention includes embodiments of a processing method, and resulting structure, for building a chip having a TSV pillar which can be used as an interconnecting structure. The process includes the deposition of a dual diffusion barrier between the TSV and the substrate the TSV is embedded within. The TSV is then exposed from the back side of the substrate so that at least a portion of the TSV protrudes from the substrate and can be used as a contact for connecting the chip to another surface. The resulting TSV is rigid, highly conductive, can be placed in a tightly pitched grid of contacts, and reduces effects of CTE mismatch.
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申请公布号 |
US2013026606(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113194214 |
申请日期 |
2011.07.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;FAROOQ MUKTA G.;GRAVES-ABE TROY L.;LANDERS WILLIAM F.;PETRARCA KEVIN S.;VOLANT RICHARD P. |
发明人 |
FAROOQ MUKTA G.;GRAVES-ABE TROY L.;LANDERS WILLIAM F.;PETRARCA KEVIN S.;VOLANT RICHARD P. |
分类号 |
H01L23/522;H01L21/768;H01L21/98 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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