FIELD-EFFECT TRANSISTOR USING GRAPHENE OXIDE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a field-effect transistor (FET) including a graphene oxide on which a reducing process has been performed, the field-effect transistor comprising: a substrate; a gate electrode formed on the substrate; a dielectric layer formed on the gate electrode; a source electrode and a drain electrode formed on the dielectric layer; and the reduced graphene oxide as a channel layer for connecting the source electrode to the drain electrode. The field-effect transistor of the present invention can be manufactured on a flexible substrate, whereas a conventional FET using silicon material can be manufactured only on a hard substrate. In particular, the reduced graphene oxide used as the channel layer disperses well in water and can thus be manufactured as a suspension, thereby enabling the manufacture of a thin film using a printing method.