发明名称 |
INSULATED GATE SEMICONDUCTOR DEVICE WITH OPTIMIZED BREAKDOWN VOLTAGE, AND MANUFACTURING METHOD THEREOF |
摘要 |
An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region, which extends in the body region and has the first type of conductivity; and a buried region having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction orthogonal to the front side and to the back side.
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申请公布号 |
US2013026536(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201213559426 |
申请日期 |
2012.07.26 |
申请人 |
STMICROELECTRONICS S.R.L.;CORONA DONATO;SAMMATRICE GIOVANNI;AMARA SEBASTIANO;PISANO SALVATORE;GRIMALDI ANTONIO GIUSEPPE |
发明人 |
CORONA DONATO;SAMMATRICE GIOVANNI;AMARA SEBASTIANO;PISANO SALVATORE;GRIMALDI ANTONIO GIUSEPPE |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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