发明名称 Method to Transfer Lithographic Patterns Into Inorganic Substrates
摘要 Techniques for minimizing or eliminating pattern deformation during lithographic pattern transfer to inorganic substrates are provided. In one aspect, a method for pattern transfer into an inorganic substrate is provided. The method includes the following steps. The inorganic substrate is provided. An organic planarizing layer is spin-coated on the inorganic substrate. The organic planarizing layer is baked. A hardmask is deposited onto the organic planarizing layer. A photoresist layer is spin-coated onto the hardmask. The photoresist layer is patterned. The hardmask is etched through the patterned photoresist layer using reactive ion etching (RIE). The organic planarizing layer is etched through the etched hardmask using RIE. A high-temperature anneal is performed in the absence of oxygen. The inorganic substrate is etched through the etched organic planarizing layer using reactive ion etching.
申请公布号 US2013026133(A1) 申请公布日期 2013.01.31
申请号 US201113191985 申请日期 2011.07.27
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;ENGELMANN SEBASTIAN ULRICH;GLODDE MARTIN;GUILLORN MICHAEL A. 发明人 ENGELMANN SEBASTIAN ULRICH;GLODDE MARTIN;GUILLORN MICHAEL A.
分类号 C23F1/02 主分类号 C23F1/02
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