发明名称 PLASMA DEVICE AND METHOD FOR PRODUCING CARBON THIN FILM USING SAME
摘要 <p>This plasma device (10) is provided with a vacuum vessel (1), an arc vaporization source (3), a negative electrode member (4), a shutter (5), and a power source (7). The arc vaporization source (3) is affixed to the side wall of the vacuum vessel (1) facing a substrate (20). The negative electrode member (4) comprises lamellar carbon and is attached to the arc vaporization source (3). The power source (7) applies a negative voltage to the arc vaporization source (3). When arc discharge is started in the vicinity of the arc vaporization source (3), an arc spot moves across the surface of the negative electrode member (4). Afterwards, once the arc spot ceases to move, the shutter (5) is opened, and a carbon thin film is formed on the substrate (20).</p>
申请公布号 WO2013015280(A1) 申请公布日期 2013.01.31
申请号 WO2012JP68707 申请日期 2012.07.24
申请人 NISSIN ELECTRIC CO., LTD.;MIKAMI TAKASHI;SUN QI;TAKAHASHI MASATO;DAIMARU TOMOHIRO;HAYASHI TSUKASA 发明人 MIKAMI TAKASHI;SUN QI;TAKAHASHI MASATO;DAIMARU TOMOHIRO;HAYASHI TSUKASA
分类号 C23C14/24;C01B31/02;C23C14/00;C23C14/06;C23C16/26;C23C16/455 主分类号 C23C14/24
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