发明名称 QUANTUM DOT OPTOELECTRONIC DEVICE AND METHODS THEREFOR
摘要 An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.
申请公布号 US2013026445(A1) 申请公布日期 2013.01.31
申请号 US201113190884 申请日期 2011.07.26
申请人 PARSAPOUR FARZAD 发明人 PARSAPOUR FARZAD
分类号 H01L33/04;H01L29/12;H01L31/0352 主分类号 H01L33/04
代理机构 代理人
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