发明名称 |
SPLIT-GATE FLASH MEMORY EXHIBITING REDUCED INTERFERENCE |
摘要 |
A split gate memory cell is fabricated with a dielectric spacer comprising a high-k material between the word gate and the memory gate stack. Embodiments include memory cells with a dielectric spacer comprising low-k and high-k layers. Other embodiments include memory cells with an air gap between the word gate and the memory gate stack.
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申请公布号 |
US2013026552(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113189964 |
申请日期 |
2011.07.25 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD.;TOH ENG HUAT;TAN SHYUE SENG (JASON);QUEK ELGIN |
发明人 |
TOH ENG HUAT;TAN SHYUE SENG (JASON);QUEK ELGIN |
分类号 |
H01L21/28;H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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