发明名称 |
Method for manufacturing integrated circuit for e.g. P-channel complementary MOS transistor, involves producing recess in active region by etching process, and forming semiconductor alloy by performing epitaxial growth process |
摘要 |
<p>The method involves forming a buried etch stop layer (210a) in a crystalline active region of a transistor e.g. P-channel complementary MOS (CMOS) transistor. A recess is produced in the crystalline active region by carrying-out an etching process e.g. wet-chemical etching process, where the recess possesses a crystallographic anisotropic ablation rate during part of the etching process. The buried etch stop layer is used as an etch stop. A deformation-inducing semiconductor alloy is formed in the recess by performing a selective epitaxial growth process. An independent claim is also included for a semiconductor component.</p> |
申请公布号 |
DE102011079833(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
DE20111079833 |
申请日期 |
2011.07.26 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
OSTERMAY, INA;KRONHOLZ, STEPHAN;OTT, ANDREAS |
分类号 |
H01L21/336;H01L21/265;H01L21/3065;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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