Semiconductor component i.e. modern integrated circuit, manufacturing method for e.g. CPU, involves forming embedded deformation-inducing semiconductor material in active region under application of cleaning process

摘要

The method involves forming a metal gate electrode structure (230a), which comprises a dielectric material with large permittivity, over an active region (202a) and a part of an insulation field (202c). A cleaning process (206a) that leads to material removal in the field, is executed. A spacer to the structure is formed for embedding the dielectric material after execution of the cleaning process. An embedded deformation-inducing semiconductor material is formed in the active region under application of another cleaning process, which leads to another material removal in the field. An independent claim is also included for a semiconductor component.