| 摘要 |
PURPOSE: A polymer, a resist composition comprising the same, and a resist pattern forming method using the same are provided to reduce defects and to have excellent lithography performance and pattern shape. CONSTITUTION: A polymer comprises an anion portion which generates acid by exposure to the end of at least one side of a backbone, and to have at least one specific structure unit. The specific structure unit is selected from: a structure unit which contains a cyclic group containing -SO2-; a structure unit which contains at least one group selected from -OH-, -COOH, -CN, -SO2NH2 and -CONH2; a structure unit generating acid by light exposure. The polymer has a group in the end of one side of the backbone indicated in chemical formula 1. In chemical formula 1, R1 is a C1-10 hydrocarbon group, Z is a C1-10 hydrocarbon group or cyano group, R1 can form a ring by combining with Z, X is a divalent bonding group, X has one of O-C(=O)-, -NH-C(=O)- and -NH-C(=NH)-, as an end which meets Q, Q is a hydrocarbon group with the valance of p+1 and can be a single bond only if p is 1, and R2 is a single bond, an alkylene group which can have a substituent, or an aromatic group which can have a substituent. |
