| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses increase in power consumption and achieves microfabrication, and a manufacturing method of the semiconductor device; and provide a semiconductor device of high reliability to which stable electric characteristics are provided, and a manufacturing method of the semiconductor device. <P>SOLUTION: By reducing average surface roughness of a surface of an oxide semiconductor film by irradiating the oxide semiconductor film with ion accelerated by an electric field, increase in leakage current of a transistor and increase in power consumption of the transistor can be suppressed. Further, heat treatment is performed to form the oxide semiconductor film so as to contain a crystal having a c-axis perpendicular to a surface of the oxide semiconductor film, thereby inhibiting variation in electric characteristics of the oxide semiconductor film due to irradiation of visible light or ultraviolet light. <P>COPYRIGHT: (C)2013,JPO&INPIT |
