METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a configuration capable of sufficiently reducing parasitic capacitance between wires.

SOLUTION: A thin-film transistor having a bottom gate structure uses a laminate composed of a first layer obtained by oxidizing part or all of a metal thin-film and an oxide semiconductor layer. An oxide insulating layer which is to serve as a channel protective layer in contact with the top of that part of the oxide semiconductor layer which overlaps a gate electrode layer is formed. When the insulating layer is formed, an oxide insulating layer covering a peripheral edge portion (including a side surface) of the laminate of the oxide semiconductor layers is formed.

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