| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching method for readily providing top rounds at trenches and vias formed by removal of a dummy material. <P>SOLUTION: A dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching. <P>COPYRIGHT: (C)2013,JPO&INPIT |
