发明名称 |
PHASE CHANGE MEMORY ELECTRODE WITH SHEATH FOR REDUCED PROGRAMMING CURRENT |
摘要 |
An example embodiment is a phase change memory cell that includes a bottom contact and an electrically insulating layer disposed over the bottom contact. The electrically insulating layer defines an elongated via. Furthermore, a bottom electrode is disposed at least partially in the via. The bottom electrode includes a sleeve of a first electrically conductive material surrounding a rod of a second electrically conductive material. The first electrically conductive material and the second electrically conductive material have different specific electrical resistances. The memory cell also includes a phase change layer electrically coupled to the first electrode.
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申请公布号 |
US2013026436(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113191490 |
申请日期 |
2011.07.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;BREITWISCH MATTHEW J.;RAJENDRAN BIPIN |
发明人 |
BREITWISCH MATTHEW J.;RAJENDRAN BIPIN |
分类号 |
H01L47/00;H01L21/20 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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