| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride light-emitting element in which current diffusion efficiency can be improved and optical power can be increased. <P>SOLUTION: The nitride light-emitting element of the present invention includes: an N-type nitride semiconductor layer; an active layer formed on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer formed on the active layer; and a heterojunction structure which is inserted in the P-type nitride semiconductor layer to form a two-dimensional electron gas layer and is composed of a GaN layer and an N-Al<SB POS="POST">x</SB>In<SB POS="POST">y</SB>GaN layer doped with an N-type dopant. <P>COPYRIGHT: (C)2013,JPO&INPIT |
