发明名称 INTEGRATED CIRCUIT COMPRISING AN ISOLATING TRENCH AND CORRESPONDING METHOD
摘要 An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench including an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer including nitrogen or carbon.
申请公布号 US2013026546(A1) 申请公布日期 2013.01.31
申请号 US201213560413 申请日期 2012.07.27
申请人 STMICROELECTRONICS (CROLLES 2) SAS;FAVENNEC LAURENT;TOURNIER ARNAUD;ROY FRANCOIS 发明人 FAVENNEC LAURENT;TOURNIER ARNAUD;ROY FRANCOIS
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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