发明名称 |
INTEGRATED CIRCUIT COMPRISING AN ISOLATING TRENCH AND CORRESPONDING METHOD |
摘要 |
An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench including an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer including nitrogen or carbon.
|
申请公布号 |
US2013026546(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201213560413 |
申请日期 |
2012.07.27 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS;FAVENNEC LAURENT;TOURNIER ARNAUD;ROY FRANCOIS |
发明人 |
FAVENNEC LAURENT;TOURNIER ARNAUD;ROY FRANCOIS |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|