Method for manufacturing e.g. application-specific integrated circuit for P-channel complementary metal oxide semiconductor transistor, involves forming electrode structures with electrode materials and insulation layers

摘要

The method involves removing a hard mask using etching process and an etching mask covering an active region (202a). Gate electrode structures (230a, 230b) of transistors (250a, 250b) are respectively formed over the active region and another active region (202b) according to removal of the etching mask. The gate electrode structures are provided with metal-containing gate electrode materials (233a) and gate insulation layers (232a) with a dielectric material. Surface treatment is made using a mixture of hydrochloric acid and hydrogen peroxide.