| 摘要 |
A semiconductor device includes a memory cell. The memory cell includes: a magnetic recording layer formed of ferromagnetic material; first and second magnetization fixed layers coupled to the magnetic recording layer; first and second reference layers opposed to the magnetic recording layer; and first and second tunnel barrier films inserted between the magnetic recording layer and the first and second reference layers, respectively. The first magnetization fixed layer has a magnetization fixed in a first direction, and the second magnetization fixed layer has a magnetization fixed in a second direction opposite to the first direction. The first and second reference layers and the first and second tunnel barrier films are positioned between the first and second magnetization fixed layers. The first reference layer has a magnetization fixed in a third direction which is selected from the first and second directions, and the second reference layer has a magnetization fixed in a fourth direction opposite to the third direction. |
