| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an off-leakage current while increasing the current driving force of a transistor. <P>SOLUTION: A semiconductor protrusion 2 is formed on a semiconductor substrate 1. Source and drain layers 5 and 6 are provided in the vertical direction of the semiconductor protrusion 2. Gate electrodes 7 and 8 are provided on the side surface of the semiconductor protrusion 2 via a gate insulating film 4. A channel region 3 is provided on the side surface of the semiconductor protrusion 2 and has different potential heights on the drain layer 6 side and on the source layer 5 side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
