| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress deterioration in the inside of a resonator of a semiconductor laser element. <P>SOLUTION: A semiconductor laser element 1 comprises: a semiconductor laminate 10 including an n-type lower clad layer 11 and an active layer 12 provided on the lower clad layer 11; a ridge 15 including a p-type upper clad layer 13 and extending on a principal surface 12a of the semiconductor laminate 10 in one direction; and an insulation film 21 covering the semiconductor laminate 10 and the ridge 15. The insulation film 21 is provided in a region of the principal surface 12a where the ridge 15 is not provided and on side walls of the ridge 15. The insulation film 21 includes a first part 21a, a second part 21b and a third part 21c and the first part 21a, the second part 21b and the third part 21c are sequentially arranged in an extension direction of the ridge 15. A thickness of the second part 21b is larger than a thickness of the first part 21a and larger than a thickness of the third part 21c. <P>COPYRIGHT: (C)2013,JPO&INPIT |
