| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor image sensor having a photodiode, which enables microfabrication of a semiconductor device by achieving higher light detection efficiency and stabilizing characteristics of pixel transistors other than light detection parts, which perform signal processing. <P>SOLUTION: By forming carbon injection layers 128a, 128b by performing joint injection of carbon in a P<SP POS="POST">+</SP>region 126 and an N type region 111, which compose a photodiode PD, capacitance of the photodiode PD is increased. Further, by uniformizing boron distribution in a channel of a transfer transistor Tr including the N type region 111 based on forming of the carbon injection layer 128b and stabilizing characteristics of the transfer transistor Tr, an occurrence of variation in characteristics of elements in a semiconductor device is prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT |
