CURRENT-LIMITING LAYER AND A CURRENT-REDUCING LAYER IN A MEMORY DEVICE

摘要

A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can flow through the resistive switching memory device. Together, the two incorporated layers help improve device performance and lifetime.