发明名称 |
SEMICONDUCTOR DEVICE INCLUDING AN ASYMMETRIC FEATURE, AND METHOD OF MAKING THE SAME |
摘要 |
A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively, the first contact being asymmetric with respect to the second contact.
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申请公布号 |
US2013026465(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113194980 |
申请日期 |
2011.07.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHANG JOSEPHINE;LAUER ISAAC;LIN CHUNG-HSUN;SLEIGHT JEFFREY |
发明人 |
CHANG JOSEPHINE;LAUER ISAAC;LIN CHUNG-HSUN;SLEIGHT JEFFREY |
分类号 |
H01L27/088;H01L21/336;H01L29/66 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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