SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves microfabrication with maintaining excellent characteristics and further achieve three-dimensional high integration of the microfabricated semiconductor device with maintaining excellent characteristics.

SOLUTION: A semiconductor device comprises: wiring buried in an insulation layer; an oxide semiconductor layer on the insulation layer; a source electrode and a drain electrode electrically connected with the oxide semiconductor layer; a gate electrode provided to overlap the oxide semiconductor layer; and a gate insulation layer provided between the oxide semiconductor layer and the gate electrode. The insulation layer is formed so as to expose a part of a top face of the wiring. The wiring is located such that a part of a top face of the wiring is located higher than a part of a surface of the insulation layer and electrically connected with the source electrode or the drain electrode in a region exposed on the insulation layer. Root-mean-square roughness of a region which is a part of the surface of the insulation layer and contacts the oxide semiconductor layer is 1 nm and under.

COPYRIGHT: (C)2013,JPO&INPIT