| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that enables high-speed input-output operation by controlling a maximum value of delay between a memory cell array and an input-output buffer. <P>SOLUTION: A semiconductor memory device comprises: a memory cell array part where multiple memory cell arrays are arranged; a peripheral circuit part where an external input-output circuit is arranged; and an internal bus 4 that connects the multiple memory cell arrays with the peripheral circuit part. The peripheral circuit part comprises: multiple external input-output buffers 23; and multiple bus interface circuits 24 that mutually convert, between them and the memory cell arrays, data for inputting and outputting the internal bus in parallel and data for inputting and outputting the multiple external input-output buffers in series. The multiple bus interface circuits 24 are arranged collectively between the internal bus 4 and the multiple external input-output buffers so that a distance d1 between the multiple bus interface circuits becomes smaller than a distance d2 between the multiple external input-output buffers and also than a maximum value d3 of a wiring width of the internal bus. <P>COPYRIGHT: (C)2013,JPO&INPIT |
