发明名称 |
METHODS AND APPARATUS FOR FORMING SEMICONDUCTOR STRUCTURES |
摘要 |
Methods and apparatus for forming semiconductor structures are disclosed herein. In some embodiments, a semiconductor structure may include a first germanium carbon layer having a first side and an opposing second side; a germanium-containing layer directly contacting the first side of the first germanium carbon layer; and a first silicon layer directly contacting the opposing second side of the first germanium carbon layer. In some embodiments, a method of forming a semiconductor structure may include forming a first germanium carbon layer atop a first silicon layer; and forming a germanium-containing layer atop the first germanium carbon layer.
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申请公布号 |
US2013026540(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113218782 |
申请日期 |
2011.08.26 |
申请人 |
APPLIED MATERIALS, INC.;SANCHEZ ERROL ANTONIO C.;HUANG YI-CHIAU |
发明人 |
SANCHEZ ERROL ANTONIO C.;HUANG YI-CHIAU |
分类号 |
H01L29/78;H01L21/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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