| 摘要 |
A semiconductor substrate (100) has three doped zones (1), (2) and (3), forming a P-N junction (101), the third zone being located between the first zone and the second zone. The P-N junction of the substrate further has a fourth doped zone (4) having a first portion (4A) in contact with the first zone; and a second portion (4B) in contact with the third zone (3), said second portion (4B) extending in the direction of the second zone (2), and not being in contact with the second zone (2); where the fourth zone (4) being doped with the same type of doping as that of the first zone.
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