METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

This method for manufacturing a semiconductor device is provided with: a step wherein a semiconductor element (1), a substrate (2) having Cu as a main element of at least the main surface, and a ZnAl eutectic solder chip (3') smaller than the semiconductor element are prepared; a step wherein the semiconductor element and the substrate are disposed such that respective bonding surfaces face each other, and the ZnAl eutectic solder chip is sandwiched between the substrate and the semiconductor element; a step wherein the ZnAl eutectic solder chip is melted by increasing the temperature, while applying a load (31) to the ZnAl eutectic solder chip sandwiched between the substrate and the semiconductor element, and a ZnAl solder layer (3) is formed; and a step wherein the temperature is reduced, while applying the load to the ZnAl solder layer.