| 摘要 |
Systems and methods of the present disclosure relates generally to techniques for controlling a gate signal applied to a transistor in an electronic component. One embodiment includes decreasing a skew rate at the rising and/or falling edges of the gate signal to reduce the effects of data signal errors. Decreasing the gate signal falling edge skew rate may decrease clock feedthrough effects of the transistor, and decreasing the gate signal rising edge skew rate may decrease crosstalk effects between more than one data paths in the electronic component. The falling edge skew rate may be manipulated by initially increasing the activating voltage of the gate signal to a higher voltage, such that the gate signal may take longer to fall. The rising edge skew rate may be manipulated by increasing a voltage later during the activating period, such that the gate signal may take longer to rise. |
