| 摘要 |
<p>A system (10) comprises a plurality of components (20) disposed to define a gas path (30). At least one component (20) comprises a silicon-bearing substrate (40) over which is disposed a coating (50), and the coating (50) comprises a recession-resistant material exposed to the gas path (30). A silicon source (60) is disposed in fluid communication with the gas path (30) and is configured to be delivered to the gas path (30) to maintain, in gas flowing in the gas path over the coating (50), a silicon mass concentration in the range from about 1.8 x 10 -4 parts per million to about 1 part per million. An associated method comprises directing a combustion gas flow (440) within a gas path (30), the gas path (30) defined by a plurality of components (20), wherein at least one component (20) comprises a silicon-bearing substrate (40) over which is disposed a coating (50), the coating (50) comprising a recession-resistant material exposed to the gas path (30); and delivering a silicon-containing material to the gas flow (440) from a silicon source (60) disposed in fluid communication with the gas path (30) to maintain within the gas flow (30) over the coating (50), a silicon mass concentration in the range from about 1.8 x 10 -4 parts per million to about 1 part per million.</p> |
